Arc filament type ion plating device
High-speed formation of a dense oxide film with a thickness of up to 10 μm. Equipped with a newly developed ionization mechanism, a CVD alternative high-density ion plating device.
High-speed formation of dense and highly plasma-resistant yttria and SiC films. Achieves a denser film quality at lower temperatures than CVD and spray methods through a reactive process using high-density plasma. Realizes a clean film formation process applicable to semiconductor-related components. Easy maintenance and low cost due to the PVD method. High-speed formation of insulating films (oxide films and carbide films). High-speed formation of dense thick films. Overcomes the weaknesses of conventional ion plating methods. A state-of-the-art PVD system for creating new surface functionalities.
- Company：神港精機 東京支店
- Price：Other
